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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. * Lead-Free Solder Plating
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V
1 6 54 2 3
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(3)
(2)
(1)
Q1
Q2
(4)
(5) BC847CDXV6T1
(6)
mAdc SOT-563 CASE 463A PLASTIC
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad RqJA TJ, Tstg TA = 25C RqJA TA = 25C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW 1G D mW/C C/W
MARKING DIAGRAMS
1L D
1G = BC847CDXV6T1, BC847CDXV6T5 1L = BC848CDXV6T1, BC848CDXV6T5 D = Date Code
Symbol PD
Unit mW mW/C C/W C
ORDERING INFORMATION
Device BC847CDXV6T1 BC847CDXV6T5 Package SOT-563 SOT-563 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel
BC848CDXV6T1 BC848CDXV6T5
SOT-563 SOT-563
(c) Semiconductor Components Industries, LLC, 2003
1
March, 2003 - Rev. 0
Publication Order Number: BC847CDXV6T1/D
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = 10 mA) Collector - Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector - Base Breakdown Voltage (IC = 10 mA) Emitter - Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) V(BR)CEO BC847CDXV6T1 BC848CDXV6T1 V(BR)CES BC847CDXV6T1 BC848CDXV6T1 V(BR)CBO BC847CDXV6T1 BC848CDXV6T1 V(BR)EBO BC847CDXV6T1 BC848CDXV6T1 ICBO 6.0 5.0 15 5.0 nA A 50 30 V 50 30 V 45 30 V V
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V) hFE 420 VCE(sat) VBE(sat) VBE(on) 580 270 520 0.7 0.9 660 800 0.25 0.6 700 770 V V mV -
SMALL- SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k,f = 1.0 kHz, BW = 200 Hz) fT Cobo NF 10 100 4.5 MHz pF dB
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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
TYPICAL CHARACTERISTICS
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
Figure 1. Normalized DC Current Gain
2.0 TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 1.0
Figure 2. "Saturation" and "On" Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)
-55C to +125C 1.2 1.6 2.0 2.4 2.8
0.4
0
0.02
0.1 1.0 IB, BASE CURRENT (mA)
10
20
0.2
10 1.0 IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200
Figure 4. Base-Emitter Temperature Coefficient
3.0 Cob 2.0
100 80 60 40 30 20 0.5 0.7 1.0
VCE = 10 V TA = 25C
1.0
0.4 0.6 0.8 1.0
2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current-Gain - Bandwidth Product
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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.3 0.45 1.0 1.35 0.5 0.5
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
Dimensions in mm
SOT-563 SOT-563 POWER DISSIPATION The power dissipation of the SOT-563 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-563 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts.
PD = 150C - 25C 833C/W = 150 milliwatts
The 833C/W for the SOT-563 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-563 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad(R). Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device
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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
PACKAGE DIMENSIONS
SOT-563, 6 LEAD CASE 463A-01 ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067
A -X-
C K
4
6
5
1
2
3
B -Y-
S
D G
5 6 PL M
J XY
0.08 (0.003)
DIM A B C D G J K S
STYLE 1: PIN 1. 2. 3. 4. 5. 6.
EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1
STYLE 2: PIN 1. 2. 3. 4. 5. 6.
EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1
STYLE 3: PIN 1. 2. 3. 4. 5. 6.
CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1
STYLE 4: PIN 1. 2. 3. 4. 5. 6.
COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR
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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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BC847CDXV6T1/D

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